
教授|博士(工学)
今泉 充
Mitsuru Imaizumi
担当科目
基礎物理学/エネルギーの科学/電気磁気学/電気工学/産学連携実習Ⅰ/産学連携実習Ⅱ/工学実験/卒業研究Ⅰ/卒業研究Ⅱ
研究キーワード
太陽光発電/放射線効果
経歴 | 大学学部卒業後、企業にてⅢ-Ⅴ族化合物半導体薄膜の結晶成長と発光デバイスの研究開発に携わる。その間、1年間米国カリフォルニア大学バークレイ校に留学。その後退職し大学院で学位(博士)を取得(研究テーマはSi系薄膜太陽電池)。その後宇宙開発事業団(現宇宙航空研究開発機構:JAXA)にて、宇宙用太陽電池の研究開発に従事。2023年4月より現職。 |
専門・研究分野 | 半導体物性、光デバイス、放射線効果 |
研究室 | 半導体光物性研究室 |
研究テーマ | 太陽光発電、半導体の放射線効果 |
研究情報
所属学会
応用物理学会、日本太陽光発電学会
研究イメージ
(原稿なし)
研究業績
論文リスト
- Displacement damage dose analysis of the output characteristics of In0.5Ga0.5P and Cu(In,Ga)(S,Se)2 solar cells irradiated with alpha ray simulated helium ions, Japanese Journal of Applied Physics, Vol. 61, No. 4 (2022), 044002, DOI: 10.35848/1347-4065/ac48d6.
- Effects of Beam Conditions in Ground Irradiation Tests on Degradation of Photovoltaic Characteristics of Space Solar Cells, Quantum Beam Science, Vol. 5, No. 2 (2021), 5020015, DOI: 10.3390/qubs5020015.
- Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrates, Journal of Crystal Growth, Vol. 507 (2019), pp. 288-294, DOI: 10.1016/j.jcrysgro.2018.11.010.
- Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons, Progress in Photovoltaics, Vol. 25, No. 2 (2016), pp. 161-174, DOI: 10.1002/pip.2840.
- Activity and current status of R&D on space solar cells in Japan, Progress in Photovoltaics, Vol. 13 (2005), pp. 529-543. DOI: 10.1002/pip.644. [Review paper]
- Results of flight demonstration of terrestrial solar cells in space, Progress in Photovoltaics, Vol. 13, No.2 (2005), pp. 93-102, DOI: 10.1002/pip.601.
- Low-temperature growth of polycrystalline GaAs films on glass substrates for space solar cell application, Journal of Crystal Growth, Vol. 221 (2000), pp. 688-692, DOI: 10.1016/S0022-0248(00)00801-0.
- Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition, Journal of Applied Physics, Vol. 88, No. 11 (2000), pp. 6848-6855, DOI: 10.1063/1.1287754.
- Analysis of structure change of Si solar cells irradiated with high fluence electrons, Journal of Applied Physics, Vol. 85, No. 3 (1999), pp. 1916-1920, DOI: 10.1063/1.369184.
- Growth of microcrystalline silicon film by electron beam excited plasma CVD without hydrogen dilution, Journal of Vacuum Science and Technology A, Vol. 16, No. 5 (1998), pp. 3134-3137, DOI: 10.1116/1.581471.
- Mechanism for the anomalous degradation of Si solar cells induced by high-energy proton irradiation, Solar Energy Materials and Solar Cells, Vol. 50 (1998), pp. 339-344, DOI: 10.1016/S0927-0248(97)00164-5.
- Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells, Journal of Applied Physics, Vol. 81, No. 11 (1997), pp. 7635-7640, DOI: 10.1063/1.365341.
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy, Japanese Journal of Applied Physics, Vol. 30, No. 3R (1991), pp. 451-453, DOI: 10.1143/JJAP.30.451.
書籍
- 「太陽電池ハンドブック」,小長井 誠,植田 譲 編,オーム社,2013年5月(分担執筆,Ⅱ編第20章).
- 「高効率太陽電池 化合物・集光型・量子ドット型・Si・有機系・その他新材料」,エヌ・ティー・エス,2012年5月(分担執筆,第7章1節).
- 「高効率太陽電池の開発と応用」,監修 山口真史,シーエムシー出版,2009年11月(分担執筆,第6章3節).
- 「化合物薄膜太陽電池の最新技術」,監修 和田隆弘,シーエムシー出版,2007年6月(分担執筆,第8章1節).
- 「太陽電池材料」,日本セラミックス協会 編,日刊工業新聞社,2006年1月(分担執筆,各論第3章2節).
- 「傾斜機能材料の開発と応用」,編集 上村誠一,野田泰稔,篠原喜一,渡辺義見,シーエムシー出版,2003年10月(分担執筆,第2章1.2節).
学会発表
- Displacement Damage Dose Analysis on Alfa-ray Degradation of Output of a CIGS Solar Cell, 48th IEEE Photovoltaic Specialists Conference, Fort Lauderdale/remote, 2021, DOI: 10.1109/PVSC43889.2021.9518453.
- Preliminary Study on Super Radiation-Resistant Mechanical-Stack Triple-Junction Space Solar Cell: PHOENIX, 46th IEEE Photovoltaic Specialists Conference, Chicago, 2019, DOI: 10.1109/PVSC40753.2019. 8980537.
- Analysis on degradation characteristics of component subcells in IMM triple-junction solar cells, 43rd IEEE Photovoltaic Specialists Conference, Portland, 2016, DOI: 10.1109/PVSC.2016.7750297.
- Study on effect of an intermediate buffer layer structure on the growth of GaAs layers on GaP substrates, 42nd IEEE Photovoltaic Specialists Conference, New Orleans, 2015, DOI: 10.1109/PVSC.2015.7356240.
- Comparative study on degradation characteristics of component subcells in IMM triple-junction solar cells irradiated with high-energy electrons and protons, 39th IEEE Photovoltaic Specialists Conference, Tampa, 2013, DOI: 10.1109/PVSC.2013.6745143.
- Innovative technologies on proton irradiation ground tests for space solar cells, 38th IEEE Photovoltaic Specialists Conference, Austin, 2012, DOI: 10.1109/PVSC.2012.6318180.
- Radiation degradation and damage coefficients of InGaP/GaAs/Ge triple-junction solar cell by low-energy electrons, 37th IEEE Photovoltaic Specialists Conference, Austin, 2011, DOI: 10.1109/PVSC.2011.6186259.
- JAXA’s strategy for development of high-performance space photovoltaics, 35th IEEE Photovoltaic Specialists Conference, Honolulu, 2010, DOI: 10.1109/PVSC.2010.5614537.
- Radiation resistance of InGaP/GaAs dual-junction thin-film space solar cell, 34th IEEE Photovoltaic Specialists Conference, Philadelphia, 2009, DOI: 10.1109/PVSC.2009.5411120.
- Durability of triple-junction solar cell for HIHT environments, Venus and Mercury exploration missions, 8th European Space Power Conference, Konstanz, Germany, 2008, CD.
- Irradiation and measurement of GaAs-based solar cells at low intensity, low temperature conditions, 33rd IEEE Photovoltaic Specialists Conference, San Diego, 2008, DOI: 10.1109/PVSC.2008.4922641.
- JAXA'S PV-Dependent Future Space Programs, 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, 2006, DOI: 10.1109/WCPEC.2006.279868.
- Analysis of Flight Demonstration Results of an InGaP/GaAs Dual- Junction Tandem Solar Cell, 31st IEEE Photovoltaic Specialists Conference, Lake Buena Vista, 2005, DOI: 10.1109/PVSC.2005. 1488193.
- Study of Radiation Response on Single-Junction Component Sub-Cells in Triple-Junction Solar Cells, 3rd World Conference on Photovoltaic Energy Conversion, Osaka, 2003, CD 3O-D6-02.
- Radiation Effects on High-Efficiency InGaP/InGaAs/Ge Triple-Junction Solar Cells Developed for Terrestrial Use, 29th IEEE Photovoltaic Specialists Conference, New Orleans, 2002, pp. 990-993, DOI: 10.1109/PVSC.2002.1190771.
- Low temperature growth of GaAs films on glass substrate for space solar cell application, 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, 2001, pp. 2242-2245.
- Comparison of Flight and Ground Test Degradation Behavior of Space Solar Cells on Highly Irradiated ETS-VI, 12th International Photovoltaic Science and Engineering Conference, Jeju, 2001.
- Low temperature growth of polycrystalline GaAs films on glass substrates for space solar cell application, 10th International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, 2000, pp 331-332.
- Flight degradation data of GaAs-on-Si solar cells mounted on highly irradiated ETS-VI [satellite], 28th IEEE Photovoltaic Specialists Conference, Anchorage, 2000, DOI: 10.1109/PVSC.2000. 916073.
- Enhancement of Growth Rate of Microcrystalline Silicon Thin Films by Hydrogen Introduction into Electron Beam Excited Plasma CVD, 11th International Photovoltaic Science and Engineering Conference, Sapporo, 1999, pp. 773-774.
- Growth of Microcrystalline Silicon Film by Electron Beam Excited Plasma CVD without Hydogen Dilution, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 1998, pp. 1758-1761.
- Analysis of the Spectral Response of Silicon Solar Cells Irradiated with High Fluence Electrons/Protons, 26th IEEE Photovoltaic Specialists Conference, Anaheim, 1997, pp. 983-986, DOI: 10.1109/PVSC.1997.654253.
- Effect of Grain Size and Dislocation Density on Thin Film Polycrystalline Silicon Solar Cells, 14th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, 1997, pp. 1385-1388.
- Mechanism for the Anomalous Degradation of Si Solar Cells Induced by High Energy Proton Irradiation, 9th International Photovoltaic Science and Engineering Conference, Miyazaki, 1996, pp. 635-636.
- Simultaneous Fabrication of GaP Window Layer and n/p Junction on Single Crystal Si Substrates by MOVPE, 5th International Photovoltaic Science and Engineering Conference, Kyoto, 1990, pp. 447-450.
受賞
- 35th IEEE Photovoltaic Specialists Conference, Best Poster Award
- 34th IEEE Photovoltaic Specialists Conference, Best Poster Award
- 3rd World Conference on Photovoltaic Energy Conversion, Paper Award & Poster Award
- 12th Int’l Photovoltaic Science and Engineering Conference, Paper Award
地域貢献 / 最近の活動
報道出演 / 掲載
(原稿なし)
プロジェクト
(原稿なし)